DMP3098L new product p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) max i d t a = 25c -30v 70m ? @ v gs = -10v -3.8a 120m ? @ v gs =-4.5v -3.0a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? power management functions ? analog switch ? load switch ? boost switch features and benefits ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 3) part number case packaging DMP3098L -7 sot23 3000/tape & reel notes: 1. no purposefully added lead. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view pin configuration d g s sot-23 dmb = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) dmb ym source gate drain equivalent circuit product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -30 v gate-source voltage v gss 20 v drain current (note 4) v gs = -10v steady state t a = 25 c t a = 70 c i d -3.8 -2.9 a pulsed drain current (note 5) i dm -11 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 4) p d 1.08 w thermal resistance, junction to ambient @t a = 25c (note 4) r ja 115 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss -30 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -800 na v ds = -30v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) -1.0 -1.8 -2.1 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 56 98 70 120 m v gs = -10v, i d = -3.8a v gs = -4.5v, i d = -3.0a forward transfer admittance |y fs | ? 3.6 ? s v ds = -5v, i d = -2.7a diode forward voltage (note 6) v sd ? ? -1.26 v v gs = 0v, i s = -2.7a dynamic characteristics (note 7) input capacitance c iss ? 336 1008 pf v ds = -25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 70 210 pf reverse transfer capacitance c rss ? 49 147 pf gate resistance r g ? 4.6 ? v gs = 0v v ds = 0v, f = 1mhz switching characteristics (note 7) total gate charge q g ? 4.0 8.0 nc v ds = -15v, v gs = -4.5v, i d = -3.8a ? 7.8 ? v ds = -15v, v gs = -10v, i d = -3.8a gate-source charge q g s ? 1.0 ? gate-drain charge q g d ? 2.5 ? turn-on delay time t d ( on ) ? 6.0 12.0 ns v ds = -15v, v gs = -10v, i d = -1a, r g = 6.0 ? rise time t r ? 5.0 10.0 turn-off delay time t d ( off ) ? 17.6 35.2 fall time t f ? 9.5 19.0 notes: 2. device mounted on fr-4 pcb on 2 oz., 0.5 in. 2 copper pads and t 5 sec. 3. pulse width 10 s, duty cycle 1%. 4. short duration pulse test used to minimize self-heating effect. 5. guaranteed by design. not subject to production testing. DMP3098L product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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